Simulation Study on the Open-Circuit Voltage of Amorphous Silicon p-i-n Solar Cells Using AMPS-1D
| Authors | B.M. Omer1,2 , F.A. Mohammed3, A. Seed Ahmed Mahgoub2,4 |
| Affiliations | 1 Department of Physics, College of Science and Arts-Ranyah, Taif University, Ranyah - Kingdom Saudi Arabia 2 Department of Applied Physics and Mathematics, Faculty of Applied Science and Computer, Omdurman Ahlia University, P.O. Box 786, Omdurman - Sudan 3 Department of Mathematics and Physics, Faculty of Education, University of Kassala, Kassala - Sudan 4 Department of Physics, Faculty of Education, University of Khartoum, P.O.Box 406, Khartoum - Sudan |
| Е-mail | bushra_omer4@yahoo.com |
| Issue | Volume 6, Year 2014, Number 1 |
| Dates | Received 22 September 2013; published online 06 April 2014 |
| Citation | B.M. Omer, F.A. Mohammed, A. Seed Ahmed Mahgoub, J. Nano- Electron. Phys. 6 No 1, 01006 (2014) |
| DOI | |
| PACS Number(s) | 78.20.Bh, 73.40.Lq |
| Keywords | AMPS-1D (10) , Modeling (20) , Amorphous Silicon solar cell, Open-circuit voltage. |
| Annotation | AMPS-1D (Analysis of Microelectronic and Photonic Structure) simulation program was used to simulate Amorphous Silicon p-i-n Solar Cell. The simulated result of illuminated current density-voltage characteristics was in a good agreement with experimental values. The dependence of the open-circuit voltage on the characteristics of the a-Si:H intrinsic layer was investigated. The simulation result shows that the open-circuit voltage does not depend on the thickness of the intrinsic layer. The open-circuit voltage decreases when the front contact barrier height is small or the energy gap of the intrinsic layer is small. The open-circuit voltage increases when the distribution of the tail states is sharp or the capture cross sections of these states are small. |
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List of References |
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