Results (3):

Title Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices
Authors T.D. Dongale, K.V. Khot, S.V. Mohite, S.S. Khandagale, S.S. Shinde, V.L. Patil, S.A. Vanalkar, A.V. Moholkar, K.Y. Rajpure, P.N. Bhosale, P.S. Patil, P.K. Gaikwad, R.K. Kamat
Issue Volume 8, Year 2016, Number 4
Pages 04030-1 - 04030-4
Title Resistive Switching Properties of Highly Transparent SnO2:Fe
Authors S.J. Trivedi,  U.S. Joshi
Issue Volume 9, Year 2017, Number 1
Pages 01025-1 - 01025-5
Title Effect of Top Electrode Materials on Switching Characteristics and Endurance Properties of Zinc Oxide Based RRAM Device
Authors Chandra Prakash Gupta, Praveen K. Jain, Umesh Chand, Shashi Kant Sharma, Shilpi Birla, Sandeep Sancheti
Issue Volume 12, Year 2020, Number 1
Pages 01007-1 - 01007-6