Results (2):

Title A Strategic Review of Reduction of Dislocation Density at the Heterogenious Junction of GAN Epilayer on Foreign Substrate
Authors S.Das Bhattacharyya, P. Mukhopadhyay, P. Das, D. Biswas
Issue Volume 3, Year 2011, Number 1, Part 1
Pages 0067 - 0084
Title Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor
Authors I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka
Issue Volume 8, Year 2016, Number 2
Pages 02044-1 - 02044-3