| Title |
A Strategic Review of Reduction of Dislocation Density at the Heterogenious Junction of GAN Epilayer on Foreign Substrate |
| Authors |
S.Das Bhattacharyya, P. Mukhopadhyay, P. Das, D. Biswas |
| Issue |
Volume 3, Year 2011, Number 1, Part 1 |
| Pages |
0067 - 0084 |
| Title |
Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor |
| Authors |
I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka |
| Issue |
Volume 8, Year 2016, Number 2 |
| Pages |
02044-1 - 02044-3 |
