Вплив рівня легування на газову чутливість кремнієвих p-n переходівEffect of the Doping Level on the Gas Sensitivity of Si p-n Junctions

Authors O.O. Птащенко1 , Ф.O. Птащенко2 , В.Р. Гільмутдінова1 , О.С. Кирничук1O.O. Ptashchenko1 , F.O. Ptashchenko2 , V.R. Gilmutdinova , O.S. Kyrnychuk1

1 2, s 865029

Е-mail aptash@onu.edu.ua
Issue Volume 4, Year 2012, Number 1
Dates (Received .2.2017, revised manuscript received – .0.201, published online 5..201)
Citation O.O. Птащенко[footnoteRef:], Ф.O. Птащенко, В.Р. Гільмутдінова, et al., Ж. нано- электрон. физ. 4 № 1, 01001 (2012)
DOI https://doi.org/10.21272/jnep.10(3).03022
PACS Number(s) 07.07.Df, 68.47.Fg
Keywords Silicon (58) , p-n junction (2) , Gas sensor (5) , Ammonia (2) , Sensitivity threshold, Doping level.
Annotation The characteristics of Si diffused p-n junctions as water and ammonia vapors sensors are studied over a wide range of the impurity concentration gradient a. It is established that a lowering of the value a from 6·1023 сm – 4 to 5·1019 сm – 4 decreases the sensitivity threshold Pm of the p-n structures to NH3 vapors (i.e. the lowest vapors partial pressure, which can be detected) by two orders, to about 0.5 Pa. This value is much lower than those of silicon meso-porous membranes and silicon nano-wires fabricated from plates with a boron concentration of 1018 сm – 3. The observed sensitivity threshold variation among the studied samples is due to the influence of uncontrolled surface centers. A treatment of the sample sequentially in HF and water drastically increases the sensitivity threshold, and the exposure in a Na2S solution significantly lowers it.

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