Transmitting Coefficient and Quasi-Stationary States of Electron in Symmetric Double-Barrier Nanostructure with Position-Dependent Potential and Effective Mass

Authors   Ju.O. Seti , M.V. Tkach
Affiliations

1 

Е-mail j.seti@chnu.edu.ua
Issue Volume 4, Year 2012, Number 1
Dates
Citation   Ju.O. Seti, M.V. Tkach, Ж. нано- электрон. физ. 4 № 1, 01001 (2012)
DOI https://doi.org/10.21272/jnep.10(3).03021
PACS Number(s) 78.67.De, 63.20.Dj, 63.22. + m
Keywords PositiondependenteffectivemassPositiondependent potentialenergyResonant tunneling nanostructureQuasi-stationary stateTransmitting coefficient.
Annotation TheexactsolutionsofSchrodingerequationareobtainedwithinthemodelofpositiondependentelectroneffectivemassandpotentialenergywhichlinearlydependsoncoordinate in near-interface region between the wells and barriers of open symmetrical double-barrier resonant tunneling structureThe transmitting coefficient of nanostructure with InGaAswells andInAlAsbarriers, the resonance energies and resonance widths of electron quasi-stationary states are calculated using these solutionsTheinfluence of the sizes of near-interface regions on the spectral parameters of electron quasi0stationary states is studied. The obtained dependences are compared with the results of the most spread model of electron effective mass and potential, which are the step-like functions of coordinate being abrupt at the interfaces of nanostructure

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