Ostwald Ripening of the InAsSbP/InAs(100) Quantum Dots in the Framework of the Modified LSW Theory

Author(s) B.V. Ivanskii , R.D. Vengrenovich, V.I. Kryvetskyi, Yu.M. Kushnir

Yuriy Fedkovych Chernivtsi National University, 2, Kotsubinsky Str., 58012 Chernivtsi, Ukraine

Issue Volume 9, Year 2017, Number 2
Dates Received 27 August 2016; revised manuscript received 25 April 2017; published online 28 April 2017
Citation B.V. Ivanskii, R.D. Vengrenovich, V.I. Kryvetskyi, Yu.M. Kushnir, J. Nano- Electron. Phys. 9 No 2, 02025 (2017)
DOI 10.21272/jnep.9(2).02025
PACS Number(s) 61.46.Hk, 61.48.De, 66.30.Pa
Key words Ostwald ripening, Quantum dots (3) , Size distribution function, Bulk diffusion, Chemical reaction.
Abstract The analysis of quantum dots (QD) growth in InAsSbP/InAs (100) structure at the stage of Ostwald ripening (OR) is carried out in the frames of generalized LSW theory. It is found that after 30 minute growing of InAsSbP QD, their size distribution is well approximated by generalized Lifshitz–Slyozov–Wagner distribution. The growth of QD in the OR process is governed simultaneously by two mechanisms, namely, bulk diffusion and chemical reaction. At shorter time of QD growth, OR stage occurs partially (20 min) or does not occur at all (10 min).


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