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А Computer Simulation of Radiation-Induced Structural Changes and Properties of Multiperiod ZrNx/MoNx System

Author(s) O.V. Sobol'1, , A.A. Meylekhov1 , T.V. Bochulia2, V.A. Stolbovoy3, V.F. Gorban'4, А.А. Postelnyk1, S.M. Shevchenko1, A.V. Yanchev2
Affiliation(s)

1 National Technical University «Kharkiv Polytechnic Institute», 2, Kyrpychov Str., 61002 Kharkiv, Ukraine

2 Kharkiv State University of Food Technology and Trade, 333, Klochkivs’ka Str., 61051 Kharkiv, Ukraine

3 National Science Center Kharkov Institute of Physics and Technology, 1, Akademichna St., 61108 Kharkiv, Ukraine

4 Frantsevich Institute for Problems of Materials Science, 3, Krzhizhanovsky Str., 03142 Kyiv-142, Ukraine

Е-mail sool@kpi.kharkov.ua
Issue Volume 9, Year 2017, Number 2
Dates Received 07 March 2017; published online 28 April 2017
Citation O.V. Sobol', A.A. Meylekhov, J. Nano- Electron. Phys. 9 No 2, 02031 (2017)
DOI 10.21272/jnep.9(2).02031
PACS Number(s) 64.75.St, 81.07.Bc, 62.25. – g, 61.05.cp, 61.82.Rx
Key words Coatings (9) , ZrNx/MoNx, Period, Potential of bias, Phase composition, Structure (84) , Stress-strain state, Solid solution (5) , Computer simulation, Hardness (9) .
Abstract Influence of the period value Λ (at different negative potential Ub that supplied during deposition) on phase composition, structure, stress-strain state and hardness of multiperiod coatings ZrNx/MoNx is investigated by using complex methods of validation structural state at combined with microindentation. Formation in layers ZrNx and MoNx the phases with cubic lattice and preferred orientation of crystallites with axis [100] is established. Stress-strain state of compression with increasing Ub is amplified and reaches maximum value (– 6.7 GPa) at Λ  20 nm and Ub  – 110 V. Hardness of coating increases with decreasing Λ from 300 to 20 nm. Coatings that obtained with Λ  20 nm and Ub  – 110 V have the highest hardness 44 GPa. Relaxation of structural compressive stresses and decreasing hardness is happening at smaller Λ and larger Ub  – 110 V (as a result of radiation-stimulated forming defect and mixing). Data of computer modeling of defectiveness at atomic level at bombardment of ions that accelerated in field Ub are used to explain the results.

References