The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire

Author(s) M.A. Ruvinskii , B.M. Ruvinskii, O.B. Kostyuk
Affiliations

Vasyl Stefanyk Precarpathian National University, 57, Shevchenko Str., 76018 Ivano-Frankivsk, Ukraine

Е-mail markruvinskii@gmail.com
Issue Volume 9, Year 2017, Number 2
Dates Received 19 March 2017; revised manuscript received 26 April 2017; published online 28 April 2017
Citation M.A. Ruvinskii, B.M. Ruvinskii, O.B. Kostyuk, J. Nano- Electron. Phys. 9 No 2, 02024 (2017)
DOI 10.21272/jnep.9(2).02024
PACS Number(s) 73.21.Fg, 73.50.Lw
Key words Semiconductor quantum wire, Gaussian fluctuations of thickness, Electrical conductivity (8) , Thermopower, Thermal conductivity (2) .
Annotation The electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness are theoretically determined. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.

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