Photoluminescence Properties of PECVD Si-C-N Films

Author(s) O.K. Porada1, V.S. Manzhara2, A.O. Kozak1, V.I. Ivashchenko1, L.A. Ivashchenko1
Affiliations

1 Institute for Problems of Materials Sciences NAS of Ukraine, 3, Krzhyzhanovsky Str., 03142 Kyiv, Ukraine

2 Institute of Physics NAS of Ukraine, 46, Nauki Ave., 03028 Kyiv, Ukraine

Е-mail o-porada@ukr.net, fizyka@iop.kiev.ua
Issue Volume 9, Year 2017, Number 2
Dates Received 01 March 2017; revised manuscript received 25 April 2017; published online 28 April 2017
Citation O.K. Porada, V.S. Manzhara, A.O. Kozak, et al., J. Nano- Electron. Phys. 9 No 2, 02022 (2017)
DOI 10.21272/jnep.9(2).02022
PACS Number(s) 81.15.Gh, 73.61.Jc
Key words Photoluminescence (16) , PECVD (5) , Hexamethyldisilazane, Si-C-N films, FTIR (16) , Optical spectra.
Annotation Hard amorphous Si-C-N films with extremely low roughness were deposited on the silicon substrates by plasma enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane (HMDS), hydrogen and nitrogen as the precursors mixture. It was investigated the photoluminescence and optical spectra of the obtained films and their hardness at different bias voltages Ud on the substrates (– 5 to – 250W). To interpret the properties of films we have studied their infrared absorption spectra. Photoluminescence spectra have two peaks and become lower in intensity and shifts to the low-energy region of the spectrum after increase of the negative bias voltage applied to the substrate higher than Ud  – 100 V. It is assumed that this is due to the increasing number of Si-C bonds in the amorphous Si-C-N matrix and growth of the disorder amorphous structure of films with increasing voltage Ud, which follows from the analysis of the in-frared absorption spectra, optical spectra and results research of the hardness films.

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