The Transition Processes in Microelectronic Ag-Ge-In/n-GaAs Compositions

Author(s) V.S. Dmitriev , L.B. Dmitrieva

Zaporizhzhya State Engineering Academy, 226, Soborny Ave., 69006 Zaporizhzhya, Ukraine

Issue Volume 9, Year 2017, Number 2
Dates Received 22 February 2017; revised manuscript received 27 April 2017; published online 28 April 2017
Citation V.S. Dmitriev, L.B. Dmitrieva, J. Nano- Electron. Phys. 9 No 2, 02027 (2017)
DOI 10.21272/jnep.9(2).02027
PACS Number(s) 73.20. – r, 85.40.Sz, 85.30.Hi
Key words Gallium arsenide, Ternary alloy, Ohmic contact (5) , Specific contact resistance, Near-contact region, Annealing (10) , Transition layer, Structure (84) .
Abstract Nowadays understanding the structure of the metal-semiconductor contact zone mainly based on research data. This is due to the variety of factors that affect the nature of the processes which occur at contact zone within the semiconductor layer and metallization. Studied microelectronic composition is based on ternary alloys Ag-Ge-In (75 % Ag, 20 % Ge, 5 % In weight). Substrate material is an epitaxial single-crystal n-n+ GaAs (111) B ne.l.  2∙1016 cm – 3, carrier mobility   5000 cm2/(V∙s). The influence of the previous annealing GaAs-wafer on specific transition resistance of the investigated contact is found. An Ag-Ge-In/n-GaAs (111) ohmic contact phenomenological model allows to determine the parameters of the relationship between the contact and heat treatment regimes. It was established that the interaction triple alloy film with the gallium arsenide surface layer is the formation of excess Ga, which creates with silver fusible alloys and chemical compounds that affect the value of contact resistance. The Ag-Ge-In/n-GaAs (111) structures heat treatment causes the interdiffusion of Ge and Ag to the nearcontact region and the formation polycrystalline, multiphase, fine-grained and relatively uniform film.


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