Physics of High Efficiency Silicon Solar Cell with Nanoinclusions of Lead Chalcogenides
| Authors | M.A. Askarov1, E.Z. Imamov2, Kh.N. Karimov2 |
| Affiliations |
1Karakalpak State University named after Berdakh, 230112 Nukus, Uzbekistan 2Tashkent University of Information Technologies named after Muhammad al-Khwarizmi, 100084 Tashkent, Uzbekistan |
| Е-mail | asqarovm@list.ru |
| Issue | Volume 16, Year 2024, Number 1 |
| Dates | Received 02 December 2023; revised manuscript received 21 February 2024; published online 28 February 2024 |
| Citation | M.A. Askarov, E.Z. Imamov, Kh.N. Karimov, J. Nano- Electron. Phys. 16 No 1, 01030 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(1).01030 |
| PACS Number(s) | 73.50.Pz, 73.63.Bd, 84.60.Jt |
| Keywords | Non-crystalline silicon, Carrier multiplication, Multi-exciton generation, Localized state, Carrier tunneling. |
| Annotation |
The question of using non-crystalline silicon as a substrate for an efficient solar cell with many nano heterojunctions based on lead chalcogenide is considered. It is shown that the creation of an efficient solar cell from noncrystalline silicon is also possible at high densities of localized states in the depth of the band gap of silicon. It has been determined that a particularly efficient conversion of solar energy into electricity is possible when heterojunctions of non-crystalline silicon and lead chalcogenides in the nanosized state are combined as components. The manifestation of the effects of multi-exciton generation and multiplication of carriers in lead chalcogenides is taken into account, and the contribution of these manifestations to the process of photocurrent generation is determined. |
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