Simulation the Beta Power Sources Characteristics

Автори S.Yu. Yurchuk, S.A. Legotin , V.N. Murashev , A.A. Krasnov , Yu.K. Omel’chenko, Yu.V Osipov, S.I. Didenko , O.I. Rabinovich
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NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia

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Випуск Том 7, Рік 2015, Номер 3
Дати Одержано 27.04.2015; у відредагованій формі – 14.10.2015; опубліковано online 20.10.2015
Посилання S.Yu. Yurchuk, S.A. Legotin, J. Nano- Electron. Phys. 7 No 3, 03014 (2015)
DOI
PACS Number(s) 00.05.Tp, 85.60.Jb
Ключові слова Betavoltic effect of power beta source (2) , Modeling the characteristics of the spectral sensitivity, Design optimization (3) .
Анотація In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them.

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