Simulation of CIGS Thin Film Solar Cells Using AMPS-1D

Author(s) J.R. Ray1 , C.J. Panchal1 , M.S. Desai1 , U.B. Trivedi2
Affiliations

1 Applied Physics Department, Faculty of Technology and Engineering. M. S. University of Baroda, Vadodara-390001, India

2 Department of Electronics, Sardar Patel University, Vallabh Vidhyanagar-380120, India

Е-mail cjpanchal_msu@yahoo.com
Issue Volume 3, Year 2011, Number 1, Part 4
Dates Received 04 February 2011, in final form 14 October 2011, published online 17 October 2011
Citation J.R. Ray, C.J. Panchal, M.S. Desai, U.B. Trivedi, J. Nano- Electron. Phys. 3 No1, 747 (2011)
DOI
PACS Number(s) 78.20.Bh, 73.40.Lq, 84.60.Jt
Key words CIGS thin film (2) , AMPS-1D simulation, Conversion efficiency (2) , Quantum efficiency (3) .
Annotation
The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied from 300 to 3000 nm. The rest of layer’s thicknesses were kept constant, viz. 60 nm for CdS, and 80 nm and 500 nm for i- and Al-ZnO, respectively. By varying thickness of CIGS layer the simulated device performance was demonstrate in the form of current-voltage (I-V) characteristics and quantum efficiency (QE).

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