Nanoelectronics: the Hall Effect and Measurement of Electrochemical Potentials by «Bottom-Up» Approach

Author(s) Yu.A. Kruglyak1 , P.A. Kondratenko2 , Yu.М. Lopatkin3

1 Odessa State Environmental University 15, Lviv Str., 65016 Odessa, Ukraine

2 National Aviation University, 1, Komarov Ave., 03058 Kyiv, Ukraine

3 Sumy State University, 2, Rimsky-Korsakov Str., 40007 Sumy, Ukraine

Issue Volume 7, Year 2015, Number 2
Dates Received 10 April 2015; published online 10 June 2015
Citation Yu.A. Kruglyak, P.A. Kondratenko, Yu.М. Lopatkin, J. Nano- Electron. Phys. 7 No 2, 02031 (2015)
PACS Number(s) 73.43. – f, 73.50.Jt, 84.37. + q
Key words Nanophysics, Nanoelectronics (3) , Molecular electronics, Bottom-up, Hall effect (4) , Quantum Hall effect, QHE, Chemical potential, Electrochemical potential, Landau levels, Edge states, Graphene (14) , NEGF.
Annotation Classical and quantum Hall effects, measurement of electrochemical potentials, the Landauer formulas and Buttiker formula, measurement of Hall potential, an account of magnetic field in the NEGF method, quantum Hall effect, Landau method, and edge states in graphene are discussed in the frame of the «bottom-up» approach of modern nanoelectronics.


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