Influence of the Carrier Concentration of Indium Phosphide on the Porous Layer Formation
| Authors | Ya.A. Suchikova1 , V.V. Kidalov1 , G.A. Sukach2 |
| Affiliations | 1 Berdyansk State Pedagogical University, 4, Shmidta Str., Berdyansk, 71118, Ukraine 2 V. Lashkaryov Institute of Semiconductor Physics NASU, 41, Nauki Ave., Kiev, 03028, Ukraine |
| Е-mail | yanasuchikova@mail.ru |
| Issue | Volume 2, Year 2010, Number 4 |
| Dates | Received 06 October 2010, in final form 08 January 2011 |
| Citation | Ya.A. Suchikova, V.V. Kidalov, G.A. Sukach, J. Nano- Electron. Phys. 2 No4, 142 (2010) |
| DOI | |
| PACS Number(s) | 61.43Gt, 78.30Fs, 78.55m |
| Keywords | Porous InP, Scanning electron microscopy (16) , Electrochemical etching, Nanostructure (19) , Segregation. |
| Annotation | This paper presents experimental results demonstrating the influence of the doping level of InP on the porous layer formation on its surface during the electrochemical etching. It is established that the more high-quality porous layers are formed using the crystals with the free carrier concentration of 2,3 × 1018 cm–3. The observation results of InP layered heterogeneity are discussed and explained in terms of the features of the growing process of heavily doped crystals. |
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List of References |
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