Effect of Radial and Axial Deformation on Electron Transport Properties in a Semiconducting Si-C Nanotube
| Автори | S. Choudhary , S. Qureshi |
| Приналежність | IIT Kanpur, Department of Electrical Engg., Kanpur, India |
| Е-mail | suds@iitk.ac.in, qureshi@iitk.ac.in |
| Випуск | Том 3, Рік 2011, Номер 1, Part 3 |
| Дати | Received 04 February 2011, in final form 15 June 2011, published online 23 June 2011 |
| Посилання | S. Choudhary, S. Qureshi, J. Nano- Electron. Phys. 3 No1, 584 (2011) |
| DOI | |
| PACS Number(s) | 81.07.De, 85.35.Kt, 71.15.Mb, 81.40.Lm, 62.20.F – , 64.70.K |
| Ключові слова | Nanotube (25) , SiCNT (2) , Armchair-zigzag (2) , Defects (12) , Deformation (8) . |
| Анотація |
We study the bias voltage dependent current characteristic in a deformed (8, 0) silicon carbide nanotube by applying self consistent non-equilibrium Green’s function formalism in combination with the density-functional theory to a two probe molecular junction constructed from deformed nanotube. The transmission spectra and electron density of states at zero bias shows a significant reduction in threshold in the case of both radially compressed and axially elongated nanotube. However, semiconductor to metal transition was not observed, though the results show large differences in current characteristic compared to a perfect nanotube. |
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