Effect of Annealing on Structural and Optical Properties of Cu Doped In2O3 Thin Films

Автори S. Kaleemulla , N. Madhusudhana Rao, N. Sai Krishna, M. Kuppan , M. Rigana Begam , M. Shobana
Приналежність

Thin Films Laboratory, Materials Physics Division, School of Advanced Sciences, VIT University, Vellore 632014 Tamilnadu, India

Е-mail skaleemulla@gmail.com
Випуск Том 5, Рік 2013, Номер 4
Дати Одержано 03.08.2013, опубліковано online - 31.01.2014
Посилання S. Kaleemulla, N. Madhusudhana Rao, N. Sai Krishna, et al., J. Nano- Electron. Phys. 5 No 4, 04048 (2013)
DOI
PACS Number(s) 68.55.Jk, 73.61. – r, 78.55. – m
Ключові слова Indium oxide, Flash evaporation (3) , Transparent conducting oxide (6) .
Анотація Cu-doped In2O3 thin films were prepared using flash evaporation method at different Cu-doping levels. The effect of annealing was studied on the structure, morphology and optical properties of the thin films. The films exhibited cubic structure and optical transmittance of the films increasing with annealing temperature. The highest optical transmittance of 78 % was observed with band gap of 4.09 eV.

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