Volatile and Non-Volatile Single Electron Memory

Автор(ы) A. Touati , A. Kalboussi 

Microelectronics Laboratory and Instrumentation (UR/03/13-04), Faculty of Sciences of Monastir, Avenue de l’Environnement, 5019 Monastir, Tunisia

Е-mail Amine.Touati@istls.rnu.tn, Adel.Kalboussi@fsm.rnu.tn
Выпуск Том 5, Год 2013, Номер 3
Даты Получено 28.12.2012, опубликовано online – 12.07.2013
Ссылка A. Touati , A. Kalboussi , J. Nano- Electron. Phys. 5 No 3, 03003 (2013)
PACS Number(s) 85.35.Gv
Ключевые слова Single electron memory, Multi tunnel junctions, Quantum dot memories, Write time, Retention time, SIMON.
Аннотация Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM). In this paper, we have design and study a nano-device structure using a two dimensional array MTJs for Volatile and Non-Volatile-SEM, in order to analyze the impact of physical parameters on the performances. We investigate the single-electron circuit characteristics in our devices qualitatively, using single-electron Monte Carlo simulator SIMON.

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