Study of Electrical, Optical and Structural Properties of Al- Doped ZnO Thin Films on PEN Substrates

Автор(ы) Mohit Agarwal, Pankaj Modi, R.O. Dusane
Принадлежность

Semiconductor Thin Films and Plasma Processing Laboratory, Dept. of Met. Engg. and Matls. Science

Indian Institute of Technology Bombay, Powai, 400076 Mumbai, India

Е-mail rodusane@iitb.ac.in
Выпуск Том 5, Год 2013, Номер 2
Даты Получено 15.02.2013, в отредактированной форме – 30.04.2013, опубликовано online – 04.05.2013
Ссылка Mohit Agarwal, Pankaj Modi, R.O. Dusane, J. Nano- Electron. Phys. 5 No 2, 02027 (2013)
DOI
PACS Number(s) 68.37.Hk, 78.66.Sq
Ключевые слова Al doped ZnO, RF magnetron sputtering (5) .
Аннотация Aluminum-doped zinc oxide (AZO), as one of the most promising transparent conducting oxide (TCO) material, has now been widely used in thin film solar cells. Most of the study of AZO films till date has been done on glass substrates but nowadays there is a growing interest in replacing glass with polymer substrate for the thin-film solar cell technology and many other flexible optoelectronic devices. In this study, AZO thin films were deposited at room temperature by RF magnetron sputtering on flexible substrates from a 3 inch diameter target of 2 wt % Al2O3 in zinc oxide. The effect of RF power on the structural, optical and electrical properties of AZO films was investigated by X-ray Diffraction (XRD), Hall measurement, and UV-visible spectrophotometery. The XRD data indicates a preferential c-axis orientation for all the films. All films exhibit high transmittance ( 85%) in visible region. Films deposited at 60 W power exhibit lowest resistivity of 1.2  10 – 3 Ωcm.

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