Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations

Автор(ы) Tanveer A. Dar, Arpana Agrawal , Pratima Sen

Laser Bhawan, School of Physics, Devi Ahilya University, Takshashila Campus, Indore-452001, India

Е-mail tanveerphysics@gmail.com
Выпуск Том 5, Год 2013, Номер 2
Даты Получено 15.02.2013, в отредактированной форме – 28.04.2013, опубликовано online – 04.05.2013
Ссылка Tanveer A. Dar, Arpana Agrawal, Pratima Sen, J. Nano- Electron. Phys. 5 No 2, 02024 (2013)
PACS Number(s) 68.55.ag, 73.61.Ga, 79.60.Dp 71.70.Gm
Ключевые слова Semiconductors (24) , II–VI semiconductors, Doping (18) , Exchange interactions.
Аннотация Structural and optical studies has been done on Nickel doped Zinc Oxide (NixZn1 – xO, x  0.03, 0.05 and 0.07 by weight) thin films prepared by pulsed laser deposition technique. The films are characterized by X-ray diffraction, Uv-vis spectroscopy, X-ray photoelectron spectroscopy. We observed a slight red shift in the optical band gap in the NiZnO subsequent to Ni doping. This shift can be assigned due to the sp-d exchange interaction of Ni- d states with s and p-states of ZnO. Also X-ray photoelectron spectroscopy studies show that Ni has well substituted in + 2 oxidation state by replacing Zn2+.

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