Автор(ы) | Balbir Singh Patial1 , Neha2, Jai Prakash2, Rajesh Kumar3, S.K. Tripathi4, Nagesh Thakur2 |
Принадлежность | 1 Department of Physics, Rajiv Gandhi Govt. College Chaura Maidan (Kotshera) Shimla, 171 004, H.P., India 2 Department of Physics, H.P. University Summer Hill Shimla, 171 005 H.P., India 3 Department of Physics, Jaypee University of Information Technology, Waknaghat 173215 H.P., India 4 Centre of Advanced Study in Physics, Panjab University Chandigarh, 160 014, India |
Е-mail | bspatial@gmail.com, surya@pu.ac.in, ntb668@yahoo.com |
Выпуск | Том 5, Год 2013, Номер 2 |
Даты | Получено 15.02.2013, в отредактированной форме – 28.04.2013, опубликовано online – 04.05.2013 |
Ссылка | Balbir Singh Patial, Neha, Jai Prakash, et al., J. Nano- Electron. Phys. 5 No 2, 02019 (2013) |
DOI | |
PACS Number(s) | 78.20.Ci, 77.22.Gm, 73.61.Jc |
Ключевые слова | Chalcogenide semiconductors, Dielectric constant (8) , Dielectric loss (2) , AC conductivity (3) . |
Аннотация | In the present study, investigations of dielectric parameters viz dielectric constant (), dielectric loss () and AC conductivity measurements have been made for bulk chalcogenide Ge15Se85 glass in the frequency range 10 to 500 kHz within the temperature range from 300 to 390 K. The variation of dielectric constant and dielectric loss with frequency at room temperature is reported and discussed in the investigated glassy binary alloy. |
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