Modeling of Si-QD Solar Cell in MATLAB

Автор(ы) S.S. Bohra1, A.K. Panchal2
Принадлежность

1 Electrical Engg. Dept. ,Sarvajanik College of Engg. and Tech., Athwalines, Surat, 390 001 Gujarat, India

2 Elect. Engg. Dept., SVNIT, Ichchhanath, Surat, 395 007 Gujarat, India

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Выпуск Том 5, Год 2013, Номер 2
Даты Получено 15.02.2013; опубликовано online 04.05.2013
Ссылка S.S. Bohra, A.K. Panchal, J. Nano- Electron. Phys. 5 No 2, 02006 (2013)
DOI
PACS Number(s) 84.60.Jt, 81.16. – c
Ключевые слова Quantum Dot (12) , Si-QD, Barrier layer, Quantum Confinement Effect (QCE), Photo-current.
Аннотация In this paper, the modeling and analysis of single bi-layer Si-QD solar cell is addressed. The modeling of solar cell is done in MATLAB. The photo currents are calculated for various Si-QD diameters like 2.5, 3, 3.5 and 4 nm and SiO2 barrier layer thicknesses like 2.5, 2 and 1.5 nm. It has been observed that with the Si-QD diameter, the photo-current increases. On the other hand, photo-current varies conversely with barrier layer thickness due low carrier tunneling probability through barrier.

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