Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach

Автор(ы) Ashutosh Kumar1, Michael Latzel2, C. Tessarek2, S. Christiansen2, R. Singh1

1 Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, 110016 New Delhi, India

2 Max Planck Institute for the Science of Light, 24, Günther-Scharowsky-Str. 1/Bau, 91058 Erlangen, Germany

Выпуск Том 5, Год 2013, Номер 2
Даты Получено 15.02.2013; опубликовано online 04.05.2013
Ссылка Ashutosh Kumar, Michael Latzel, C. Tessarek, et al., J. Nano- Electron. Phys. 5 No 2, 02001 (2013)
PACS Number(s) 81.16. – c, 81.16.rf, 78.67. – n, 78.60.Hk
Ключевые слова GaN (33) , Nanorod (4) , Nanomasking, Reactive-ion etching, Cathodoluminescence, Band-edge luminescence, Yellow band luminescence.
Аннотация Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices have potential applications in electronics and optoelectronics. This paper describes the fabrication of GaN nanorods using Ni nanomasking and reactive ion etching. The morphology of GaN nanorods was studied by field emission scanning electron microscopy. The optical properties of GaN nanorods were studied by Cathodoluminescence (CL) spectroscopy. CL results revealed the existence of characteristic band-edge luminescence and yellow band luminescence.

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