Study of Photoluminescence Behaviour of Porous Silicon Samples Prepared at 20 mA Current Density

Автор(ы) Fateh Singh Gill1, Himanshu Gupta2, L.P. Purohit2, Pankaj K. Pal , Kiran Sharma1, Neeraj Dhiman1, R. Kumar2, R.M. Mehra3
Принадлежность

1 Graphic Era University, Clement Town, Dehradun, India

2 Department of Physics, Gurukula Kangri University, 249401 Haridwar, India

3 School of Engineering & Technology, Sharda University, 201306 Greater Noida, India

Е-mail lppurohit@gmail.com
Выпуск Том 5, Год 2013, Номер 1
Даты Получено 30.12.2012, опубликовано online – 28.03.2013
Ссылка Fateh Singh Gill, Himanshu Gupta, L.P. Purohit, et al., J. Nano- Electron. Phys. 5 No 1, 01019 (2013)
DOI
PACS Number(s) 78.55.Mb, 81.07.Ta, 61.46.Df
Ключевые слова Photoluminescence (17) , Quantum dots (3) , Nanoparticles (64) .
Аннотация The paper presents a study on a series of porous silicon films of various thicknesses, prepared at 20 mA current density using a photoluminescence fitting model to determine the average crystallite size of sphe-rical shaped interconnected silicon quantum dots. Discrepancy in photoluminescence behavior of the samples is well explained with this model.

Список литературы