Irradiation Effects on Microstructure and Dielectric Properties of Ba[(Mg0.32Co0.02)Nb0.66]O3 [BMCN] Thin Films

Автор(ы) N.V. Patel1, Bhagwati Bishnoi1, P.K. Mehta1 , Ravi Kumar2, R.J. Choudhary3, D.M. Phase3, V. Ganesan3, C.J. Panchal4

1 Department of Physics, Faculty of Science, the M. S. University of Baroda, Vadodara – 390 002, India

3 UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore – 452017, India

4 Applied Physics Department, Faculty of Technology & Engineering, The M. S. University of Baroda, Vadodara – 390001, Gujarat, India

Выпуск Том 4, Год 2012, Номер 4
Даты Получено 31.07.2012; опубликовано online – 29.12.2012
Ссылка N.V. Patel, Bhagwati Bishnoi, P.K. Mehta, et al., J. Nano- Electron. Phys. 4 No 4, 04001 (2012)
PACS Number(s) 61.80.Jh, 77.55. + f
Ключевые слова Microstructure and dielectric properties, Thin films (60) , SHI irradiation.
Аннотация Ba[(Mg0.32Co0.02)Nb0.66]O3 [BMCN] thin films prepared on Pt-Si, MgO, Silicon and ITO coated glass substrates by Pulsed Laser Deposition Technique are investigated. Relative growth parameters suggest that ITO coated glass substrate has good potential for growing films with near Nano size columnar grains. In comparison to bulk, dielectric constant and dielectric loss increases in BMCN films. This undesirable rise in dielectric loss can be drastically reduced by a factor of more than 1/100th times through Ag15+ ion irradiation at 1 × 1012 ions/cm2 dose.

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