Prospects of III-Vs for Logic Applications

Автор(ы) U.P. Gomes1, Y.K. Yadav1, S. Chowdhury1,  K. Ranjan1, S. Rathi1, D. Biswas2
Принадлежность

1 Advanced Technology Development Center, Indian Institute of Technology Kharagpur, 721302 West Bengal, India

2 Electronic and Electrical Comm. Engg., Indian Institute of Technology Kharagpur, 721302 West Bengal, India

Е-mail umesh.gomes@gmail.com
Выпуск Том 4, Год 2012, Номер 2
Даты Received 19 October 2011; revised manuscript received 28 April 2012; published online 07 May 2012
Ссылка U.P. Gomes, Y.K. Yadav, S. Chowdhury, et al., J. Nano-Electron. Phys. 4 No 2, 02009 (2012)
DOI
PACS Number(s) 1.05.Ea, 73.61.E, 68.55.ag, 84.30.Sk
Ключевые слова CMOS (8) , III-V Materials, HEMT (3) , Logic (15) , Digital (5) .
Аннотация The increasing challenges for further scaling down of Si CMOS require the study of alternative channel materials. This paper highlights the significance of III-V compound semiconductor materials in order to face the looming fate of Si CMOS technology. The potential advantages of using III-Vs as channel materials for future III-V CMOS is its outstanding transport properties that have been widely accepted in high frequency RF applications. However, many significant challenges in front of III-V digital technology needs to be overcome before III-V CMOS becomes feasible for next generation high speed and low power logic applications. But it may be that this situation is changing given recent progress in the fabrication of high-mobility III-Vs based heterostructure electronic devices for logic applications to fulfill the needs towards the everyday evolving III-V CMOS technology.

Список литературы