Analysis of Junctionless Nanowire Transistor with Heterojunction, Metal Nitride and Dual Metal Gate

Автор(ы) S. Ashok Kumar , J. Charles Pravin
Принадлежность

Department of Electronics and Communication Engineering, Kalasalingam Academy of Research and Education, Krishnankoil, TamilNadu, India

Е-mail jcharlespravin@gmail.com
Выпуск Том 13, Год 2021, Номер 5
Даты Received 21 August 2021; revised manuscript received 20 October 2021; published online 25 October 2021
Ссылка S. Ashok Kumar, J. Charles Pravin, J. Nano- Electron. Phys. 13 No 5, 05014 (2021)
DOI https://doi.org/10.21272/jnep.13(5).05014
PACS Number(s) 85.30.Tv
Ключевые слова Junctionless tri-gate, Double-channel, TiN (95) , DMG (2) , Silicon carbide (SiC).
Аннотация

This paper focuses on the performance of SilicononInsulator (SOI) based junctionless (JL) nanowire multichannel transistor. It has been analyzed with various strains in order to improve the device performance. Instead of one channel, by using the Multi Bridge Channel (MBC) concept, two channels have been incorporated in the JL nanowire structure. Moreover, three methods have been used to improve the JL device. The first one is the Dual Metal Gate (DMG) concept, the second one is heterojunction (silicon carbide (SiC) is used as the source/drain material), and the third one is metal nitride. By using these three methods, mobility has been increased, as well as current drive. The current-voltage (I-V) characteristics comparison has been performed between DMG and Single Metal Gate, DMG and Single Metal Nitride gate using Sentaurus Technology Computer Aided Design (TCAD). The resultswere calibrated using physical models, such as the temperature-dependent carrier transport model (drift diffusion), density gradient model, mobility model, and Shockley-Read-Hall recombination model. By integrating heterojunction into DMG and single metal nitride gate, the performance of both devices has been improved, but single metal nitride gate has shown the 6 % better performance than DMG with heterojunction. In all the devices, the Subthreshold Swing (SS) is almost 60 mV dec – 1 which is near the ideal value.

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