Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode

Автор(ы) A.H. Khediri1,2, A. Talbi1, M.A. Benamara1, Z. Benamara1

1Laboratoire de Microélectronique Appliquée, Université Djillali Liabès de Sidi Bel Abbès, 22000, Algeria

2Plateforme Technologique de Micro-fabrication, Centre de Développement des Technologies Avancées, Cité 20 août 1956, Baba Hassen, 16303 Algiers, Algeria

Е-mail abdelkrim.khediri@gmail.com
Выпуск Том 13, Год 2021, Номер 4
Даты Received 21 March 2021; revised manuscript received 04 August 2021; published online 20 August 2021
Ссылка A.H. Khediri, A. Talbi, M.A. Benamara, Z. Benamara, J. Nano- Electron. Phys. 13 No 4, 04002 (2021)
DOI https://doi.org/10.21272/jnep.13(4).04002
PACS Number(s) 85.30.Kk, 85.30.Hi
Ключевые слова Barrier height (11) , Current-voltage measurements, Indium phosphide, Indium nitride, Interface state density, Schottky diodes (2) .

In this paper, we present an electrical study of InN thin films elaborated by nitridation of InP (100) substrates. The samples have been obtained using a glow discharge source (GDS) in ultra-high vacuum. The gold (Au) Schottky contact was deposited on the top of the surface. The electrical characteristics of Au/InN/n-InP structure have been investigated using current-voltage and capacitance-voltage methods. We show from the current-voltage characterization at room temperature that the main conduction mechanism is thermionic emission current. A value of 1.57 for the ideality factor of the diode is extracted using analytical methods. Furthermore, the barrier height of the device is evaluated to 0.64 eV. This value is substantially larger than previously reported in the literature. The low saturation current and series resistance (Rs) of 12.3 A and 38 Ω, respectively, indicate the presence of the InN layer. From the capacitance-voltage technique under reverse bias, the built-in potential and the ionized donor concentration are 0.83 V and 1.16 x 1017 cm – 3, respectively. A frequency dependent capacitance is measured and attributed to the presence of interface states. Based on the high-low frequency method, we determined the average density of interface states (Nss) with a value of 5.6 x 1011 eV – 1 cm – 2. These findings reveal good passivation of the InP surface with the use of a thin InN film.

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