Study of a New Device Structure: Graphene Field Effect Transistor (GFET)

Автор(ы) P. Vimala1, Manjunath Bassapuri, C.R. Harshavardhan, P. Harshith, Rahul Jarali, T.S. Arun Samuel
Принадлежность

Department of Electronics & Communication Engineering, Dayananda Sagar College of Engineering, Shavige Malleshwara Hills, Bengaluru, 560078 Karnataka, IndiaNational Engineering College, Kovilpatti, 628503 Tamil Nadu, India

Е-mail drvimala-ece@dayanandasagar.edu
Выпуск Том 13, Год 2021, Номер 4
Даты Received 29 March 2021; revised manuscript received 09 August 2021; published online 20 August 2021
Ссылка P. Vimala, Manjunath Bassapuri, et al., J. Nano- Electron. Phys. 13 No 4, 04021 (2021)
DOI https://doi.org/10.21272/jnep.13(4).04021
PACS Number(s) 72.80.Vp, 85.30.Tv
Ключевые слова NanoHUB, Graphene (23) , GFET (3) , Mobility (10) , Drain current (3) .
Аннотация

The aim of this paper is to improve the performance of nanodevices yielding the overall gain of electronic applications. The performance in low-power consumption, high sensitivity and faster switching speeds are prerequisites for the modern era of electronics. The proposed paper defines the 3D structure of a Graphene Field Effect Transistor (GFET). The titled structure is in an evolutionary phase and is being researched day by day. The prime advantages of the device for its overall performance and specific applications have made a detailed study interesting. The structure of graphene provides exceptional capabilities for its operation and hence an excellent solution for sensing applications. Graphene is placed between the source and drain junctions, forming a bridge and providing a path for electron movement. The nanodevice is simulated for electrical parameters such as drain current, drain voltage, Dirac voltage, mobility, electron density, hole density, temperature. The device is modelled using the NanoHUB simulation tool. The behavior of drain current with varying channel length and gate voltages is proposed. The improved characteristics of the device with decreasing channel length, gate voltage and Dirac point shift are observed. The Dirac point plays a vital role in the conduction mechanism of graphene and hence GFET. The Dirac point was studied for the given simulation parameters, and the Dirac point shift was observed, leading to a change in conduction. The variation of drain current was simulated for different drain voltages, which provides us sufficient evidence of efficiency and hence low-power consumption. The distribution of carriers and various operating temperatures along the channel is presented for a varying gate voltage. The results show the outperformance of GFET for present day needs in sensing applications.

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