High Pressure Growth Approach for the Preparation of Reduced Graphene Oxide and its Investigation Using Raman Spectroscopy

Автор(ы) Mamta Thakran1, Sumeet Kumar1, Rohit Phogat1, S.K. Ray2, R. Brajpuriya3, Abhimanyu Singh Rana4, Brijesh Kumar1,5, 6

1Centre for Nano Science & Technology, Amity Institute of Nanotechnology, Amity University, Haryana, India

2Centre for Stem Cell, Amity Institute of Biotechnology, Amity University, Haryana, India

3University of Petroleum and Energy Studies, Department of Physics, School of Engineering, Dehradun, India

4BML Munjal University, Gurugram, Haryana, India

5Amity School of Engineering & Technology, Amity University, Haryana, India

6Amity Institute of Laser Technology & Optoelectronics, Amity University, Haryana, India

Е-mail bkumar2@ggn.amity.edu
Выпуск Том 13, Год 2021, Номер 4
Даты Received 21 March 2021; revised manuscript received 06 August 2021; published online 20 August 2021
Ссылка Mamta Thakran, Sumeet Kumar, Rohit Phogat, et al., J. Nano- Electron. Phys. 13 No 4, 04015 (2021)
DOI https://doi.org/10.21272/jnep.13(4).04015
PACS Number(s) 81.05.ue, 81.07. – b, 61.46.Df, 78.30. – j, 81.90. + c
Ключевые слова High pressure growth, Modified Hummers method, Raman spectroscopy (18) , Graphene oxide (2) , (2354) .

Graphene derivatives show extraordinary mechanical, optical, and electronic properties, which gave rise to high scientific interest and huge potential for a variety of applications. Raman spectroscopy is a versatile tool to characterize and identify the chemical and physical properties of graphene derivatives. We describe essential Raman scattering processes of the first- (G) and second-order (D, G*, 2D, G + D, 2G) modes in GO and r-GO prepared by a high-pressure growth approach. In r-GO, the linewidth is broadened and slightly red-shifted in all the bands, in comparison with GO because of strain development during the high-pressure growth approach (hydrothermal process) as a result of removal of oxygen functionalities. A normalized intensity ratio (ID/IG) for GO and r-GO is discussed. In both the samples, ID/IG is high which indicates the small size of GO and r-GO and the presence of turbostratic carbon and disordered structures. The peak fitting of the 2D band exhibits four Lorentzian peaks, and the intensity of the 2D band with respect to the G band is strongly reduced, which confirms that we have successfully synthesized bilayer/trilayer GO and r-GO. For GO and r-GO, the crystallite size (La) is calculated. The existence of the 2D band confirms that we have successfully synthesized high-quality GO and r-GO.

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