Generator of EEG Delta Rhythms Based on Si Nanowires

Автор(ы) K.O. Ostrovska1, A.A. Druzhinin2, N.S. Liakh-Kaguy2, I.P. Ostrovskii1,2

1Ivan Franko National University of Lviv, 1, Universytetska St., 79000 Lviv, Ukraine

2Lviv Polytechnic National University, 12, Bandera St., 79013 Lviv, Ukrarine

Выпуск Том 13, Год 2021, Номер 4
Даты Received 04 April 2021; revised manuscript received 03 August 2021; published online 20 August 2021
Ссылка K.O. Ostrovska, A.A. Druzhinin, et al., J. Nano- Electron. Phys. 13 No 4, 04012 (2021)
PACS Number(s) 78.67.Uh, 81.07.Gf
Ключевые слова Silicon nanowires, Elecroencephalogram, Delta rhythm, U-I characteristics, Thermo-emf.

The paper deals with the design of a delta rhythm generator of human brain electroencephalogram (EEG) based on investigations of electrophysical characteristics of Si nanowire joints. Si nanowire joints were obtained during their growth by chemical vapour deposition method. The diameter of the Si wires ranges from 100 nm to 20 m. Studies of the U-I characteristics of Si nanowire joints have shown that when a critical value of the current of about 10A is reached, the generation of voltage fluctuations is observed. The period of oscillations is about 1 s, while their amplitude is 100-120 V that is similar to delta rhythm oscillations in the human brain. Different reasons of the oscillations have been discussed: 1) contact phenomena; 2) existence of strain in the joint junction; 3) existence of non-compensated charges of dangling bonds in the wire surface. A detailed consideration of the proposed reasons has shown that the effect is not associated with contact phenomena, as well as with strain in the joint junction. A po- arising due to heating of the joint junction by current. However, this corresponds to the nonequilibrium state of the crystal. The return of the nanowire to equilibrium causes periodic voltage oscillations. The revealed effect allows to elaborate a delta rhythm generator which can be used to treat various diseases (children with autism spectrum disorders, internally displaced persons from anti-terrorist operation zone, etc.).

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