Influence of Ionizing Irradiation on Magnetosensitive Transistor Structures

Автор(ы) Ya.I. Lepikh, M.А. Glauberman
Принадлежность

Interdepartmental Scientific-Educational Physics and Technical Center of MES and NAS of Ukraine at the Odesa I.I. Mechnikov National University, 2, Dvoryanskaya St., 65082 Odesa, Ukraine

Е-mail ndl_lepikh@onu.edu.ua
Выпуск Том 13, Год 2021, Номер 4
Даты Received 21 March 2021; revised manuscript received 10 August 2021; published online 20 August 2021
Ссылка Ya.I. Lepikh, M.А. Glauberman, J. Nano- Electron. Phys. 13 No 4, 04009 (2021)
DOI https://doi.org/10.21272/jnep.13(4).04009
PACS Number(s) 75.50.Pp, 81.40.Wx
Ключевые слова Magnetosensitive transistor structures, Ionizing irradiation, Annealing (16) .
Аннотация

The work is devoted to the study of the influence of ionizing radiation and temperature on the main magnetosensitive transistor structure (MTS) characteristics. MTS are widely used in various fields of science and technology, in particular, as magnetic field sensors, position and movement sensors of structural elements of various systems and etc. The characteristics of MTS and, accordingly, devices based on them may be unstable due to the influence of external factors. One of these factors is ionizing radiation. In this work, we investigated the effect of irradiation at the “Elektroniks” linear accelerator with fast electrons and at the “Gamma-25” MRS installation with -quanta on the MTP absolute sensitivity. MTS samples with different surface electrical resistance values were irradiated with different doses and intensities. The influence of heat treatment on MTS samples after their irradiation was also investigated. The dependences of the MTS sensitivity on various integral doses of electron irradiation and -quanta intensity are presented. The change in the MTS sensitivity dependence on the annealing temperature on the structure characteristics was established. The possibility of using the temperature effect to stabilize the MTS characteristics was investigated. The optimal range of MTS annealing temperature near 450 C in air and the heating time, at which the defect formation process which could negatively affect the MTS characteristics does not occur in the semiconductor structure, and, accordingly, in devices based on them, were determined. It is shown that MTS heat treatment after irradiation with fast electrons and -quanta can be successfully used to stabilize the MTS characteristics.

Список литературы