Utility of a Reverse Double-drift Structure for Fabricating GaN IMPATT Diode Operating in the Terahertz Regime

Автор(ы) Sahanowaj Khan1, Rishav Dutta2, Aritra Acharyya3, Arindam Biswas2, Hiroshi Inokawa4, Rudra Sankar Dhar1
Принадлежность

1Department of Electronics and Communication Engineering, National Institute of Technology, Chaltlang, Aizawl, Mizoram 796012, India

2School of Mines and Metallurgy, Kazi Nazrul University, Asansol, Burdwan, West Bengal 713340, India

3Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Cooch Behar, West Bengal 736170, India

4Research Institute of Electronics, Shizuoka University, Hamamatsu 4328011, Japan

Е-mail khannowda84@gmail.com
Выпуск Том 13, Год 2021, Номер 3
Даты Received 21 March 2021; revised manuscript received 16 June 2021; published online 25 June 2021
Ссылка Sahanowaj Khan, Rishav Dutta, et al., J. Nano- Electron. Phys. 13 No 3, 03014 (2021)
DOI https://doi.org/10.21272/jnep.13(3).03014
PACS Number(s) 42.55.Px, 45.70.Ht
Ключевые слова Double-drift region, GaN (32) , IMPATT, Reverse DDR, Terahertz.
Аннотация

Utility of the reverse double-drift region (DDR) structure has been studied for fabricating the gallium nitride impact avalanche transit time (IMPATT) diode operating at 1.0 terahertz (THz). Static and large-signal simulations have been carried out in order to verify the THz capabilities of conventional (normal) and reverse DDR structures. It is revealed that IMPATT operation is only possible in a reverse GaN DDR structure due to the lower value of series resistance of it as compared to the normal GaN DDR structure. Normal DDR GaN IMPATT cannot be operational at THz regime. Earlier, the authors had calculated the series resistance of conventional GaN DDR IMPATT diode designed to operate at 1.0 THz, however. They did not take into account the current crowing and spreading resistance at the ohmic metal contacts. That is why, the results were misleading. Those results lead to the conclusion that conventional THz GaN DDR IMPATT may produce sufficient effective negative resistance since the series resistance of it remains within the range of 1.5-2.0 Ω. In this paper, authors have proposed a reverse DDR IMPATT structure exclusively for GaN material and THz frequency bands. By using this reverse DDR structure, p+-GaN ~ Ni/Au contact can obtain a sufficient contact area, so that the anode-contact resistance can be minimized. A non-sinusoidal voltage-excited large-signal model developed by the authors has been used to study the static (DC) and large-signal properties of conventional and reverse DDR structures at 1.0 THz. The present study on the evaluation of THz source seems to open a new horizon for THz researchers and scientists.

Список литературы