Single Electron Transistor Based Current Mirror: Modelling and Performance Characterization

Автор(ы) Ashok.D. Vidhate, Shruti Suman
Принадлежность

ECE Department, Koneru Lakshmaiah Education Foundation (K L University), Andhra Pradesh, India

Е-mail vidhate.a.d@gmail.com
Выпуск Том 13, Год 2021, Номер 1
Даты Received 11 January 2021; revised manuscript received 15 February 2021; published online 25 February 2021
Ссылка Ashok.D. Vidhate, Shruti Suman, J. Nano- Electron. Phys. 13 No 1, 01017 (2021)
DOI https://doi.org/10.21272/jnep.13(1).01017
PACS Number(s) 85.30-z
Ключевые слова Self-biased current mirror, MOS current mirror, Nano-scale MOSFET, Power dissipation, CMOS integrated circuit, Amplifier, Single Electron Transistor (3) , Coulomb blockade, Cascode current mirror.
Аннотация

Current mirror is basic building block of amplifier, oscillator and comparator circuit. An ideal current mirror is independent of input power and temperature. The output current is constant mirrored image of input current. In order to avoid wrong equilibrium it must have high output impedance. This can be achieved by using super cascode formation. The single electron coulomb blockade structure provides low voltage operation and scaling of transistor to 10 nm. The Single Electron Transistor (SET) based CM is modeled and analyzed by simulation and the results shows improved performance of CM.

Список литературы