Improving the Physical Model of GaAs Solar Cells

Автор(ы) R.V. Zaitsev , M.V. Kirichenko

National Technical University «Kharkiv Polytechnic Institute», 2, Kyrpychov St., 61002 Kharkiv, Ukraine

Выпуск Том 12, Год 2020, Номер 6
Даты Received 28 June 2020; revised manuscript received 18 December 2020; published online 25 December 2020
Ссылка R.V. Zaitsev, M.V. Kirichenko, J. Nano- Electron. Phys. 12 No 6, 06015 (2020)
PACS Number(s) 84.60.Jt, 61.43.Bn
Ключевые слова Photovoltaic converters, Solar cells (17) , GaAs (15) , Efficiency (23) , Surface recombination, Photon recycle.

For large-scale GaAs-based solar cells using, it is necessary to increase their efficiency and reduce the cost of their manufacture. The existing model, which describes the processes in the semiconductor material, has significant simplifications and does not take into account a number of significant processes. The article considers the problem of processes in gallium arsenide based solar cells optimization, proposes to take into account the mechanisms of radiation, surface recombination, which have a significant impact and have not been previously considered in the physical model. The article also considers methods for taking into account the photon reabsorption, the effect of which in GaAs based solar cells is taken into account by building a model of photon reabsorption. The proposed model is based on the Steiner photon absorption model, which is successfully used for modeling single-junction GaAs solar cells, taking into account some boundary conditions considering recombination processes on the device inner surfaces. Calculations using the proposed model allowed us to offer an optimized solution of thin GaAs based solar cells with a good back surface mirror and reduced surface recombination.

Список литературы