The Influence of Technological Factors on Photoconverters Electrophysical Characteristics

Автор(ы) A.A. Nikonova , O.Y. Nebesniuk , Z.A. Nikonova
Принадлежность

Engineering Institute of Zaporozhe National University, Soborniy Ave., 226, 69006 Zaporozhe, Ukraine

Е-mail nk_alina@ukr.net
Выпуск Том 12, Год 2020, Номер 5
Даты Received 30 March 2020; revised manuscript received 15 October 2020; published online 25 October 2020
Ссылка A.A. Nikonova, O.Y. Nebesniuk, Z.A. Nikonova, J. Nano- Electron. Phys. 12 No 5, 05012 (2020)
DOI https://doi.org/10.21272/jnep.12(5).05012
PACS Number(s) 85.30. – z, 72.40. + w
Ключевые слова Technology (13) , Porous anti-reflective layers, Photoelectric converters, Silicon structures, Heterojunctions, Parameters characteristics.
Аннотация

Solar energy represents a sensible alternative to the use of thermal, chemical and nuclear power sources. Solar radiation can satisfy the growing needs of humanity with its energetic resources. Nowadays the actual problem is the development and production of highly effective and economical photoconverters (PCs). Thus, we need new technologies and materials. Due to their high efficiency, temperature stability, and low sensitivity to radiation exposure, heterostructure-based PCs are the most promising for the use. In the article, the technology of PC production on the base of silicon structures with ITO/n-Si/n+-Si heterojunctions is proposed. Preparation of these layers by spraying method on the surface of silicon plates is based on the results of the determination of the optimal values of heating temperature, deposition rate, velocity of gas flow from the spray nozzle, ITO layer thickness, concentration of InCl3 to SnCl4 in alcohol solution, and other factors. The technological peculiarities of producing these layers by spraying method and their influence on PC electrophysical characteristics, operational reliability and efficiency are revealed.

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