Light Emission from Silicon Structures with Dielectric Insulation

Автор(ы) S.P. Pavlyuk , L.V. Ishchuk, V.M. Telega , V.Yu. Malyshev, S.G. Dubovyk

Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska St., 01601 Kyiv, Ukraine

Выпуск Том 12, Год 2020, Номер 4
Даты Received 18 April 2020; revised manuscript received 15 August 2020; published online 25 August 2020
Ссылка S.P. Pavlyuk, L.V. Ishchuk, V.M. Telega, et al., J. Nano- Electron. Phys. 12 No 4, 04021 (2020)
PACS Number(s) 73.40.Qv
Ключевые слова Silicon structure with dielectric insulation, Extremely high-density currents, Joule heating, Light emission.

The paper presents the results of an experimental study of the current dependence of samples of silicon structures with dielectric insulation (SSDI) on voltage, and describes the features of the flow of currents of extremely high density in these structures. A study of the processes of self-organization of electron-hole plasma in SSDI manufactured using SDI technology and an analysis of the obtained results have been performed. The temperature Ti of intrinsic conductivity, which was 860 K, was experimentally determined at a current density of less than 2(104 A/cm2, which exceeds the temperature in the structures made by “silicon on insulator” (SOI) technology by more than 200 K. It is shown that the current causes an intense Joule heating of these structures, an emergence of their own conductivity and the electron-hole plasma formation. A plasma stratification is accompanied by a glow in the form of symmetrically located red spots. The appearance of each new spot is accompanied by the formation of an S-shaped area on the volt-ampere characteristic, which is a typical manifestation of the current cord formation. The current cord occurs if the characteristics of the current dependence on the voltage (I-U) of SSDI structures deviate from the Ohm's law, having an S-shape. The appearance of cords is inherent to materials, in particular semiconductors, with the electrical conductivity increasing rapidly with temperature growth, due to the increase in charge carrier concentration. The obtained results are compared to authors’ earlier results of studies of light emission from the structures produced by SOI technology. It was found that the effects in the SOI structures occur at lower current density values than in the SSDI structures.

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