Crystal Growth and Electro-optical Characterization of In2Se2.7Sb0.3 Compound

Автор(ы) Piyush Patel1, S.M. Vyas2, Vimal Patel2, Himanshu Pavagadhi2

1Department of Physics, Khyati Institute of Science, Khyati Foundation, Gujarat, India

2Department of Physics, School of Sciences, Gujarat University, Ahmedabad, 380009 Gujarat, India

Выпуск Том 12, Год 2020, Номер 4
Даты Received 08 February 2020; revised manuscript received 15 August 2020; published online 25 August 2020
Ссылка Piyush Patel, S.M. Vyas, et al., J. Nano- Electron. Phys. 12 No 4, 04022 (2020)
PACS Number(s) 81.10. – h, 72.20. – i, 78.20. – e
Ключевые слова Surface features, Layer growth, Bridgman technique, Resistivity (10) , Optical band gap (7) .

The III-VI group of semiconducting materials is mostly used for the developing of ionizing radiation detectors, solid-state electrodes as well as solar cell, photosensitive heterostructures and ionic batteries. Layer structure of III-VI semiconductor crystals have been extensively studied as a two-dimensional crystal system. In2Se3 semiconductor with A2B3 general compound formula has a hexagonal crystal structure. In2Se2.7Sb0.3 has been grown by the Bridgman technique.The freezing interference temperature gradient was 60 C/cm and the best quality crystals have been obtained at a growth velocity of 0.35 cm/h. The crystal perfection was studied under optical microscope, with a various growth feature observed on top free surface of the crystal which is predominant of layer growth mechanism. EDAX technique has been used for testing the presence of constituent elements of In2Se2.7Sb0.3 compound. Defect formation in crystals is a key event making growth possible under near-equilibrium conditions. In this work, the morphological study was performed by atomic force microscopy of the surface of the crystal compound. The temperature dependence of electrical resistivity of In2Se2.7Sb0.3 compound was studied using four-probe technique. The band gap was determined using UV-Vis spectrophotometer in the wavelength range 200 nm to 900 nm. From these characterizations the results and conclusions are reported in this paper.

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