Fabrication and Characterization of Polyaniline Nanofiber Films by Various Techniques

Автор(ы) Ahmed M. Shano1 , Zainab S. Ali2
Принадлежность

1Bilad Alrafidain University College, Department of Radiological Techniques, Diyala, Iraq

2Tikrit University, College of Education/Tuzkhurmatu, Department of Physics, Tikrit, Iraq

Е-mail dr.ahmed.alaskari89@gmail.com
Выпуск Том 12, Год 2020, Номер 4
Даты Received 06 February 2020; revised manuscript received 15 August 2020; published online 25 August 2020
Ссылка Ahmed M. Shano, Zainab S. Ali, J. Nano- Electron. Phys. 12 No 4, 04001 (2020)
DOI https://doi.org/10.21272/jnep.12(4).04001
PACS Number(s) 81.05.Lg
Ключевые слова Hydrothermal method, Chemical oxidation, Polyaniline (3) , Structural properties (9) , Nanofibers (2) , AC conductivity (3) .
Аннотация

In this paper, the polyaniline nanofibers (PAni NFs) were successfully synthesized by chemical oxidation and hydrothermal methods. The structural, surface morphological, optical, and electrical properties were investigated for PAni NFs films deposited by spin coating technique. The XRD results showed that PAni films have crystalline nature. The average crystallite sizes were 7.5 and 9.9 nm for PAni prepared by hydrothermal and chemical methods, respectively. The FESEM images of PAni clearly indicated that it has nanofiber like structure. The presence of characteristic functional groups in FTIR spectrum confirmed the formation of PAni. Optical characterization showed that the direct electronic transition is allowed in the energy gap. The values of energy gap for PAni NFs are 2.46 eV and 2.63 eV at hydrothermal and chemical oxidation methods, respectively. The absorbance decreases rapidly at short wavelengths corresponding to the energy gap of the film. AC electrical properties showed that the PAni NFs prepared by chemical method have higher AC conductivity than those prepared by hydrothermal method, whereas the capacitance decreases when frequency increases. The values of frequency exponent (s) of the investigated thin films lie between 1.15 and 0.16 at hydrothermal and chemical oxidation methods, respectively. The dielectric constant (ε1) and dielectric loss (ε2) were found to be influenced by preparation method.

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