Modeling of Threshold Voltage and Drain Current of Uniaxial Strained p-MOSFETs

Автор(ы) Amit Chaudhry1, Sonu Sangwan2, Jatindra Nath Roy3
Принадлежность

1 UIET, Panjab University, Sector – 25, 91160014, Chandigarh, India

2 UIET, Panjab University, Sector – 25, 91160014, Chandigarh, India

3 Solar Semiconductor Private Limited, Hyderabad, India

Е-mail amit_chaudhry01@yahoo.com
Выпуск Том 3, Год 2011, Номер 4
Даты Received 11 August 2011, published online 30 December 2011
Ссылка Amit Chaudhry, Sonu Sangwan, Jatindra Nath Roy, J. Nano- Electron. Phys. 3 No4, 27 (2011)
DOI
PACS Number(s) 85.30.De, 85.30.Tv
Ключевые слова Mobility (9) , Strained–Si, Model (52) , Numerical (6) .
Аннотация
An analytical model describing the threshold voltage and drain current in strained-Si p-MOSFETs as a function of applied uniaxial strain applied at the gate has been developed in this paper. The uniaxial stress has been applied through the silicon nitride cap layer. The results show that the threshold voltage falls and drain current rises due to applied uniaxial strain. The results have also been compared with the experimentally reported results and show good agreement.

Список литературы