On Temperature Dependence of Longitudinal Electrical Conductivity Oscillations in Narrow-gap Electronic Semiconductors

Автор(ы) G. Gulyamov2 , U.I. Erkaboev1 , R.G. Rakhimov1, J.I. Mirzaev1
Принадлежность

1Namangan Institute of Engineering and Technology, 160115 Namangan, Uzbekistan

2Namangan Engineering – Construction Institute, 160103 Namangan, Uzbekistan

Е-mail rkaboev1983@mail.ru
Выпуск Том 12, Год 2020, Номер 3
Даты Received 08 November 2019; revised manuscript received 15 June 2020; published online 25 June 2020
Ссылка G. Gulyamov, U.I. Erkaboev, R.G. Rakhimov, J.I. Mirzaev, J. Nano- Electron. Phys. 12 No 3, 03012 (2020)
DOI https://doi.org/10.21272/jnep.12(3).03012
PACS Number(s) 71.20. – b, 71.28. + d
Ключевые слова Oscillations of electronic heat capacity, Oscillations of magnetic susceptibility and oscillations of electrical conductivity, Electronic narrow-gap semiconductors, Cyclotron effective mass.
Аннотация

Oscillations of longitudinal electrical conductivity, oscillations of magnetic susceptibility and oscillations of electronic heat capacity for narrow-gap electronic semiconductors are considered. A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The theory is compared with the experimental results of Bi2Se3. A theory is constructed of the temperature dependence of the magnetic susceptibility oscillations for narrow-gap electronic semiconductors. Using these oscillations of magnetic susceptibility, the cyclotron effective masses of electrons are determined. The calculation results are compared with experimental data. The proposed model explains the experimental results in p-Bi2 – xFexTe3 at different temperatures.

Список литературы