Resistive Switching Memory Properties of Electrodeposited Cu2O Thin Films

Автор(ы) Rohini R. Patil1, Shubham V. Patil1, Amey M. Sabnis1, Kishorkumar V. Khot1 , Rajanish K. Kamat2 , Tukaram D. Dongale1 , Deok-kee Kim3
Принадлежность

1Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416 004, India

2Department of Electronics, Shivaji University, Kolhapur, 416 004, India

3Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul – 05006, Republic of Korea

Е-mail tdd.snst@unishivaji.ac.in
Выпуск Том 12, Год 2020, Номер 2
Даты Received 15 February 2020; revised manuscript received 15 April 2020; published online 25 April 2020
Ссылка Rohini R. Patil, Shubham V. Patil, Amey M. Sabnis, et al., J. Nano- Electron. Phys. 12 No 2, 02035 (2020)
DOI https://doi.org/10.21272/jnep.12(2).02035
PACS Number(s) 81.15.Pq, 77.80.Fm, 68.60. − p
Ключевые слова Electrodeposition (5) , Cu2O, Resistive switching; Memristor.
Аннотация

The Cu2O thin film was developed using an electrodeposition approach for resistive memory application. The impact of the deposition voltage (1V, 2V, 3V, and 4V) on resistive switching (RS)/memristive properties of Cu2O thin films was studied. The XRD spectrum reveals that deposited Cu2O has a cubic crystal structure. The bipolar RS in Al/Cu2O/FTO device was clearly observed during the current-voltage (I-V) measurement. The basic memristive properties were calculated from I-V data. The charge transport studies suggested that the SCLC mechanism was responsible for device conduction, and RS was due to filamentary effect. The result suggested that the electrodeposition technique is useful to fabricate a memristive device for various applications.

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