Resistive Switching Characteristics of Electrochemically Anodized Sub-stoichiometric Ti6O Phase

Автор(ы) Kiran A. Nirmal1, Shirish T. Killedar1, Trishala R. Desai1, Kishorkumar V. Khot1 , Rajanish K. Kamat2, Tukaram D. Dongale1 , Deok-kee Kim3
Принадлежность

1Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India

2Department of Electronics, Shivaji University, Kolhapur 416004, India

3Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea

Е-mail deokkeekim@sejong.ac.kr
Выпуск Том 12, Год 2020, Номер 2
Даты Received 15 February 2020; revised manuscript received 15 April 2020; published online 25 April 2020
Ссылка Kiran A. Nirmal, Shirish T. Killedar, Trishala R. Desai, et al., J. Nano- Electron. Phys. 12 No 2, 02029 (2020)
DOI https://doi.org/10.21272/jnep.12(2).02029
PACS Number(s) 85.90. + h, 68.55. − a, 68.60. − p
Ключевые слова Ti6O, Electrochemical anodization, Resistive switching (4) , Memristive device (2) .
Аннотация

We have developed Ti6O thin film using the electrochemical anodization approach for resistive switching (RS) application. The effect of anodization time (1 h, 2 h and 3 h) on the RS/memristive properties was investigated. The structural analysis was carried out by using the XRD technique, which reveals that the formation of the sub-stoichiometric Ti6O phase. The scanning electron microscopy image reveals that the thin film has compact and porous surface morphology. The electrical results clearly show bipolar RS in Al/Ti6O/Ti device. The boost in the RS properties was achieved by increasing the anodization time. The basic memristive properties were calculated using experimental I-V data. The Schottky, Hopping and Ohmic charge transport mechanisms contribute to the conduction, whereas the filamentary effect controls the RS process of the Al/Ti6O/Ti memristive devices.

Список литературы