Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

Автор(ы) Pramod J. Patil1, Namita A. Ahir1, Suhas Yadav1, Chetan C. Revadekar1, Kishorkumar V. Khot1 , Rajanish K. Kamat2 , Tukaram D. Dongale1 , Deok-kee Kim3
Принадлежность

1Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, 416004Kolhapur, India

2Department of Electronics, Shivaji University, 416004Kolhapur, India

3Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, Republic of Korea

Е-mail pramod.math@gmail.com.in
Выпуск Том 12, Год 2020, Номер 2
Даты Received 16 February 2020; revised manuscript received 15 April 2020; published online 25 April 2020
Ссылка Pramod J. Patil, Namita A. Ahir, et al., J. Nano- Electron. Phys. 12 No 2, 02008 (2020)
DOI https://doi.org/10.21272/jnep.12(2).02008
PACS Number(s) 78.20.Bh, 85.35. – p, 77.80.Fm.
Ключевые слова Simulation Resistive memory Thermal reaction model ZrO2.
Аннотация

In the present work, the effect of reset voltage, filament radius, filament resistivity, and oxide membrane thickness on the nanoscale ZrO2 RRAM devices was reported. The present investigation is based on the thermal reaction model of RRAM. The outcomes show a decline in saturated temperature with a rise in the radius and resistivity of filament. Furthermore, increases in saturated temperature with an increase in oxide membrane thickness were observed for the ZrO2 based RRAM device. The saturated temperature of the device was mainly influenced by reset voltage, oxide layer thickness, filament size, and filament resistivity. The simulation results of the present investigation can be beneficial for the optimization of RRAM devices.

Список литературы