Tunable Anti-Guiding Factor and Optical Gain of InGaAlAs/InP Nano-Heterostructure under Internal Strain

Автор(ы) Pyare Lal1, Garima Bhardwaj2, Sandhya Kattayat3, P.A. Alvi1
Принадлежность

1Department of Physics, Banasthali Vidyapith-304022 Rajasthan, India

2Department of Electronics & Communication Engineering, IIMT Engineering College, Meerut-250001, UP, India

3Higher Colleges of Technology, Abu Dhabi, UAE

Е-mail drpaalvi@gmail.com
Выпуск Том 12, Год 2020, Номер 2
Даты Received 15 February 2020; revised manuscript received 10 April 2020; published online 25 April 2020
Ссылка Pyare Lal, Garima Bhardwaj, Sandhya Kattayat, et al., J. Nano- Electron. Phys. 12 No 2, 02002 (2020)
DOI https://doi.org/10.21272/jnep.12(2).02002
PACS Number(s) 42.55.Ah, 42.60.Lh, 73.21.Fg
Ключевые слова Anti-Guiding Factor, Optical gain (2) , Differential gain, Current density (4) .
Аннотация

This paper reports about the study of tunable anti-guiding factor and gain spectra of type-I GRIN (Graded Refractive Index) compressively strained InGaAlAs/InP nano-heterostructure. Through the modeling and mathematical simulation, the tuning behaviors of optical gain, differential gain and refractive index-change with carrier densities have been studied in the presence of internal strain which occurs due to lattice mismatch. According to the results, both the anti-guiding factor and optical gain are enhanced as increase in the percentage compressively strain. The lasing wavelength has also been found to shift towards lower values with increasing strain. These studies explain the tunability of the studied heterostructure and mostly utilized in optical fiber based communication systems.

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