Junction Configuration Effect on the Performance of In2S3/CZTS Solar Cells

Автор(ы) B. Zaidi1, C. Shekhar2 , K. Kamli3, Z. Hadef3, S. Belghit1 , M.S. Ullah4
Принадлежность

1 Department of Physics, Faculty of Material Sciences, University of Batna 1, Batna, Algeria

2 Department of Applied Physics, Amity University Gurgaon, 122413 Haryana, India

3 Department of Physics, Faculty of Sciences, Université 20 août 1955, BP 26, 21000 Skikda, Algeria

4 Department of Electrical and Computer Engineering, Florida Polytechnic University, Lakeland, USA

Е-mail zbeddiaf@gmail.com
Выпуск Том 12, Год 2020, Номер 1
Даты Received 17 September 2019; revised manuscript received 15 February 2020; published online 25 February 2020
Ссылка B. Zaidi, C. Shekhar, K. Kamli, et al., J. Nano- Electron. Phys. 12 No 1, 01024 (2020)
DOI https://doi.org/10.21272/jnep.12(1).01024
PACS Number(s) 84.60.Jt, 88.40.jm
Ключевые слова In2S3, Solar cells (17) , CZTS (9) , SCAPS-1D (4) .
Аннотация

This research work presents a numerical simulation of CZTS based solar cell by using one dimensional solar cell simulation program called solar cell capacitance simulator (SCAPS). In this work, the influence of In2S3 buffer layer thickness and natural defect density on the performance and the J-V characteristics of CZTS based solar cells has been studied. The simulation results illustrate that the optimal In2S3 buffer layer thickness is 50 nm. We observed that the defect density is perfect from1015 to 1017 cm – 3. The optimal photovoltaic parameters have been achieved with an efficiency of 20.95 % with JSC ( 26.85 mA/cm2 and VOC ( 0.78 V.

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