Investigation of Implantation-Induced Damage in Indium Phosphide for Layer Transfer Applications

Автор(ы) U. Dadwal1, V. Pareek1, R. Scholz2, M. Reiche2, S. Chandra1, R. Singh1
Принадлежность

1 Indian Institute of Technology, Hauz Khas, 110016, New Delhi, India

2 Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany

Е-mail rsingh@physics.iitd.in
Выпуск Том 3, Год 2011, Номер 1, Part 5
Даты Received 04 February 2011, published online 08 December 2011
Ссылка U. Dadwal, V. Pareek, R. Scholz, et al., J. Nano- Electron. Phys. 3 No1, 1081 (2011)
DOI
PACS Number(s) 61.80.Jh, 81.05.Ea, 61.72.Qq, 61.72.J –
Ключевые слова Ion implantation (5) , Damage (2) , TEM (69) , Nanocracks, Nanobubbles.
Аннотация
100 keV H+ and He+ ion implantation was performed in 300 µm thick (100) InP substrates at liquid nitrogen temperature with a constant fluence of 1 × 1017 cm–2. The surface morphology of the as-implanted InP samples was studied by optical microscopy. The implantation-induced damage was investigated by cross-sectional TEM, which revealed the formation of damage band in both cases near to the projected range of implanted ions. The formation of hydrogen-induced nanocracks and helium filled nanobubbles was observed in as-implanted InP samples.

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