Physics and Technology of Heterosystems with Films of Germanium and Germanium with Gallium

Автор(ы) Ye. Venger, O. Kolyadina, V. Holevchuk, L. Matveeva, I. Matiyuk, V. Mitin
Принадлежность

V. Lashkarov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Prospect Nauky, Kyiv 03028, Ukraine

Е-mail matveeva@isp.kiev.ua
Выпуск Том 11, Год 2019, Номер 5
Даты Received 15 July 2019; revised manuscript received 21 October 2019; published online 25 October 2019
Ссылка Ye. Venger, O. Kolyadina, V. Holevchuk, et al., J. Nano- Electron. Phys. 11 No 5, 05029 (2019)
DOI https://doi.org/10.21272/jnep.11(5).05029
PACS Number(s) 68.55.а1, 73.50.h
Ключевые слова Heteroepitaxy, Internal mechanical stresses, Absorption and electroreflectance, Band structure (2) , Electronic parameters of the films and substrate.
Аннотация

Thin films of germanium and germanium with 1.05 % gallium are prepared by thermal deposition in vacuum on gallium arsenide substrates. The thickness of the films was 1 (m, the thickness of the substrates was 300 µm, the growth rate of the films was 1.75 Å/s. The studies were carried out by methods of profilography of the film surface, absorption spectroscopy and electroreflectance of light. In the films and at the interface, the band gap, the spectral broadening parameters, the energy relaxation time of the light-excited charge carriers, and the mechanical stresses were determined. The additional germanium-gallium interface boundary has been identified. The tensile stresses 6.8·108 Pa on it were greater than the compressive stresses 2.6·108 Pa at the film-substrate interface.

Список литературы