Optical and Electrical Properties of n-type Porous Silicon Produced by Electrochemical Etching and Study the Influence of γ-irradiation

Автор(ы) A.A. Sulaiman1, A.A.K. Muhammed2, M.M. Ivashchenko3
Принадлежность

1Department of Physics, College of Science, University of Mosul, Mosul, Iraq

2Sumy State University, 2, Rimsky-Korsakov St., 40007 Sumy, Ukraine

3Konotop Institute of Sumy State University, 24, Myru Ave., 41615 Konotop, Ukraine

Е-mail
Выпуск Том 11, Год 2019, Номер 5
Даты Received 13 May 2019; revised manuscript received 23 October 2019; published online 25 October 2019
Ссылка A.A. Sulaiman, A.A.K. Muhammed, M.M. Ivashchenko, J. Nano- Electron. Phys. 11 No 5, 05025 (2019)
DOI https://doi.org/10.21272/jnep.11(5).05025
PACS Number(s) 68.55.ag, 72.10.Bg
Ключевые слова Porous silicon (3) , Irradiation (10) , Electrochemical etching.
Аннотация

Porous silicon layers were prepared by electrochemical etching. We study the physical and structural properties of porous silicon. Scanning electron microscopy (SEM) and cross sectional SEM have been used to study the effect of γ-irradiation on the pore size of PSi for various irradiation doses. The growth in pore width can be attributed to an increasing holes number on the Si surface with increasing γ-irradiation dose. The cross-section of the PSi layer shows micrographs of the morphology of the PSi layer perpendicular to the Si surface, with side branches in the orientation. The transmittance spectra of the PSi were obtained in the range 320-1200 nm with increasing γ-irradiation at 100 Gy, the transmittance of the PSi is decreased and the reflectance of PSi shows the largest reflectance with increasing irradiation. The analysis of photoluminescence spectra has been shown that the formation of fully penetrated porous silicon can lead to a decrease of the photoluminescence intensity with increasing of γ irradiation dose. It may be caused by the increase of the specific surface area and by the bigger band gap value of PSi than for bulk Si. Electrical measurements such as resistivity, conductivity, barrier height, and ideality factor were investigated. The barrier height has small value and the decrease in the barrier height is due to the interface between PSi layer and Si wafer which acts as a defect in the interface and also due to the saturation current has maximum value at 100 Gy dose. The ideality factor increased from 1.544 to 17.563 at dose 100 Gy. The resistivity of the porous silicon was 105-104 (.cm which decreased as the irradiation dose of γ-ray increased. The photocurrent spectrum in the range 1.25-3.00 eV shows porous silicon irradiated at dose 100 Gy which contains two peaks at 2.13 and 2.77 eV which lie in the visible region.

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