Synthesis and Characterization of Cu Doped ZnS Thin Films Deposited by Spin Coating

Автор(ы) V.H. Choudapur1, S.B. Kapatkar1, A.B. Raju2
Принадлежность

1Department of Physics, B.V.B. College of Engineering and Technology, Hubballi, 580031, Karnataka, India

2Department of Electrical and Electronics Engineering, B.V.B. College of Engineering and Technology, Hubballi, 580031, Karnataka, India

Е-mail veena_choudapur@bvb.edu
Выпуск Том 11, Год 2019, Номер 5
Даты Received 20 June 2019; revised manuscript received 24 October 2019; published online 25 October 2019
Ссылка V.H. Choudapur, S.B. Kapatkar, et al., J. Nano- Electron. Phys. 11 No 5, 05017 (2019)
DOI https://doi.org/10.21272/jnep.11(5).05017
PACS Number(s) 61.05.C, 68.37.Hk, 73.61.Ga, 73.90.f
Ключевые слова Spin coating (5) , Hydrothermal method, Electrical resistivity (3) , Cu doped ZnS thin films.
Аннотация

ZnS and copper doped zinc sulphide thin films are prepared through spin coating method. The nanoparticles are synthesized by hydrothermal method using low cost starting chemicals and demineralised water as solvent. The results of Cu doped zinc sulphide are compared with those of the undoped zinc sulphide. High band gap, uniform, and conducting thin films are obtained. The ultraviolet-visible absorption graphs were used to estimate the energy gap values. The XRD analysis verifies the successful addition of Cu atoms within the zinc sulphide lattice up to 6 % with no change in the host X-ray diffraction peak positions. However, the crystallinity is affected with Cu doping level in ZnS due to lattice strain. The XRD and EDS analysis of films confirm the purity of the samples. The films show high band gap, transparency, and electrical current in the range 10 – 4 to 10 – 11 mA. Adding Cu atoms to ZnS can tune the band gap and conducting properties. These are suitable for UV detectors and other optoelectronic applications.

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